PART |
Description |
Maker |
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
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Hynix Semiconductor TT electronics Semelab, Ltd.
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HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
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K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块) 2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块(2.584脚,512M的位寄存型的DDR - SDRAM内存模块余)
|
SIEMENS AG
|
K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
W9816G6BB-7 W9816G6BB |
BGA SDRAM 512K X 2 BANKS X 16 BITS SDRAM From old datasheet system
|
Winbond Electronics
|
HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
W946432AD W946432A |
SDRAM 2Mx32 512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|
IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module 32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块) x72 SDRAM Module x72内存模块 32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块)
|
IBM Microeletronics DB Lectro, Inc. International Business Machines, Corp.
|
EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位,1个等级)
|
Elpida Memory, Inc.
|
K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|